@article{paperid:1046754,
author = {FARKHANI, HOOMAN and Peiravi, Ali and Farshad Moradi},
title = {A New Write Assist Technique for SRAM Design in 65nm CMOS Technology},
journal = {Integration, the VLSI Journal},
year = {2015},
volume = {50},
month = {January},
issn = {0167-9260},
pages = {16--27},
			numpages = {11},
keywords = {SRAM، Writem argin، Read static noise margin، Write assist},
}