Title : ( The Effects of Random Distribution Fluctuations of Dopants on SOI-MOSFET Performance )
Authors: Jafar Ahadzadeh Farhood , Seyed Ehsan Abtahi , Seyed Ebrahim Hosseini ,
Full TextAbstract
In this paper the effects of random distribution fluctuations of dopants in the channel of a nano-scale SOI-MOSFET are investigated via simulations. Simulations are performed using energy balance model. According to obtained results, the threshold voltage is subjected to variations due to non-uniform distribution of dopants under the gate.
Keywords
, SOI-MOSFET Transistor, Channel, dopant, Threshold Voltage
@inproceedings{paperid:1026976,
author = {Jafar Ahadzadeh Farhood and Seyed Ehsan Abtahi and Hosseini, Seyed Ebrahim},
title = {The Effects of Random Distribution Fluctuations of Dopants on SOI-MOSFET Performance},
booktitle = {IEEE International Conference on Electron Devices and Solid-State Circuits},
year = {2009},
keywords = {SOI-MOSFET Transistor; Channel; dopant; Threshold Voltage},
}
%0 Conference Proceedings
%T The Effects of Random Distribution Fluctuations of Dopants on SOI-MOSFET Performance
%A Jafar Ahadzadeh Farhood
%A Seyed Ehsan Abtahi
%A Hosseini, Seyed Ebrahim
%J IEEE International Conference on Electron Devices and Solid-State Circuits
%D 2009
