Title : ( Quasi-monolithic integration of high-power GaN-based HEMTs for high-frequency applications )
Authors: Alexander Kricke , Mojtaba Joodaki , Nethaji Dharmarasu , Guenter Kompa , Hartmut Hillmer ,
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Abstract
We report on the quasi-monolithic integration of unpackaged high-power AlGaN/GaN HEMTs into a silicon basis, which finally will be the backbone and main part of an integrated circuit. III/V compound semiconductor devices fulfil special tasks which Si devices are unable to perform. For demonstration purposes we embedded high-power nitride semiconductor HEMTs in silicon substrates with planar electrical contacts using micromachining techniques. This enables integration of both unpackaged devices of different materials (e.g. high-power nitride semiconductor HEMTs) and devices made by thin film technology (e.g. resistors, inductors, etc), leading to a system-on-package on a cost-effective silicon substrate.
Keywords
, Quasi, monolithic integration; GaN, based HEMTs
@article{paperid:1037016,
author = {Alexander Kricke and Joodaki, Mojtaba and Nethaji Dharmarasu and Guenter Kompa and Hartmut Hillmer},
title = {Quasi-monolithic integration of high-power GaN-based HEMTs for high-frequency applications},
journal = {Semiconductor Science and Technology},
year = {2007},
volume = {22},
number = {11},
month = {November},
issn = {0268-1242},
pages = {1245--1248},
numpages = {3},
keywords = {Quasi-monolithic integration; GaN-based HEMTs},
}
%0 Journal Article
%T Quasi-monolithic integration of high-power GaN-based HEMTs for high-frequency applications
%A Alexander Kricke
%A Joodaki, Mojtaba
%A Nethaji Dharmarasu
%A Guenter Kompa
%A Hartmut Hillmer
%J Semiconductor Science and Technology
%@ 0268-1242
%D 2007
