International Journal of Academic Research in Applied Science, Volume (1), No (4), Year (2012-4) , Pages (67-78)

Title : ( Design and Optimization of a P+N+IN+ Tunnel FET with Si Channel and SiGe Source )

Authors: M. Kamali Moghadam , Seyed Ebrahim Hosseini ,

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Abstract

A Silicon tunnel FET with Si1-x Gex source is investigated and optimized for improved performance. In order to optimize the device performance, Germanium mole fraction and the length of the SiGe region is varied and the optimum values are obtained. Moreover, the ource/channel hetero-junction is assumed graded. The grading distance is varied from zero (abrupt hetero-junction) to total channel length to achieve the best performance, i.e. low off state current, high Ion/Ioff and low sub-threshold swing.

Keywords

, Tunnel FET, Ion/Ioff, sub-threshold swing (SS), Si, SiGe.
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@article{paperid:1038197,
author = {M. Kamali Moghadam and Hosseini, Seyed Ebrahim},
title = {Design and Optimization of a P+N+IN+ Tunnel FET with Si Channel and SiGe Source},
journal = {International Journal of Academic Research in Applied Science},
year = {2012},
volume = {1},
number = {4},
month = {April},
issn = {2306-6857},
pages = {67--78},
numpages = {11},
keywords = {Tunnel FET; Ion/Ioff; sub-threshold swing (SS); Si; SiGe.},
}

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%0 Journal Article
%T Design and Optimization of a P+N+IN+ Tunnel FET with Si Channel and SiGe Source
%A M. Kamali Moghadam
%A Hosseini, Seyed Ebrahim
%J International Journal of Academic Research in Applied Science
%@ 2306-6857
%D 2012

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