بیست و سومین کنفرانس مهندسی برق ایران , 2015-05-10

Title : ( Analysis of radio frequency and stability performance on double-gate extended source tunneling field-effect transistors )

Authors: saeid marjani , Seyed Ebrahim Hosseini ,

Citation: BibTeX | EndNote

Abstract

The radio frequency (RF) and stability performance of double-gate (DG) extended source tunneling field-effect transistors (TFETs) are evaluated by extracting RF parameters like cut-off frequency (ft), maximum oscillations frequency (fmax) and stability factor.

Keywords

, radio frequency (RF); stability factor; nonquasistatic (NQS); extended source; tunneling field, effect transistor (TFET)
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@inproceedings{paperid:1049140,
author = {Marjani, Saeid and Hosseini, Seyed Ebrahim},
title = {Analysis of radio frequency and stability performance on double-gate extended source tunneling field-effect transistors},
booktitle = {بیست و سومین کنفرانس مهندسی برق ایران},
year = {2015},
location = {تهران, IRAN},
keywords = {radio frequency (RF); stability factor; nonquasistatic (NQS); extended source; tunneling field-effect transistor (TFET)},
}

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%0 Conference Proceedings
%T Analysis of radio frequency and stability performance on double-gate extended source tunneling field-effect transistors
%A Marjani, Saeid
%A Hosseini, Seyed Ebrahim
%J بیست و سومین کنفرانس مهندسی برق ایران
%D 2015

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