Title : ( A Novel Double Gate Tunnel Field Effect Transistor with 9 mV/dec Average Subthreshold Slope )
Authors: saeid marjani , Seyed Ebrahim Hosseini ,
Full TextAbstract
In this paper, a novel double gate tunnel field effect transistor (DGTFET) configuration with p+-layer in the channel is proposed and investigated. The proposed structure is a Sichannel DGTFET, which has a p+-layer in the channel connected to the P+ source region in order to achieve improved switching and higher ON-current when compared to a conventional TFET. The simulation results of DGTFET with p+-layer in the channel shows excellent characteristics with high ION/IOFF ratio (about 5×1012) and an average subthreshold slope of about 9 mV/decade over 4 decades of current at room temperature. Results suggest that, the DGTFET with p+-layer in the channel seem to be the most optimal ones to replace MOSFET for ultralow power applications and switching devices.
Keywords
, Band, to, band tunneling (BTBT); ON, current; Average subthreshold slope (SSAVG); DGTFET
@inproceedings{paperid:1049301,
author = {Marjani, Saeid and Hosseini, Seyed Ebrahim},
title = {A Novel Double Gate Tunnel Field Effect Transistor with 9 mV/dec Average Subthreshold Slope},
booktitle = {The 22nd Iranian Conference on Electrical Engineering (ICEE 2014)},
year = {2014},
location = {تهران, IRAN},
keywords = {Band-to-band tunneling (BTBT); ON-current; Average subthreshold slope (SSAVG); DGTFET},
}
%0 Conference Proceedings
%T A Novel Double Gate Tunnel Field Effect Transistor with 9 mV/dec Average Subthreshold Slope
%A Marjani, Saeid
%A Hosseini, Seyed Ebrahim
%J The 22nd Iranian Conference on Electrical Engineering (ICEE 2014)
%D 2014
