Title : ( RF Modeling of p-n-p-n Double-Gate Tunneling Field-Effect Transistors )
Authors: saeid marjani , Seyed Ebrahim Hosseini ,
Full TextAbstract
This paper presents radio-frequency (RF) modeling of p-n-p-n double-gate tunneling field-effect transistors (TFETs). The p-n-p-n TFETs are evaluated for various RF parameters such as cut-off frequency, maximum oscillation frequency, gatesource capacitance, gate-drain capacitance, channel resistance, and transconductance. Direct comparisons of high-frequency performances and extracted parameters are made with conventional TFETs. A nonquasistatic radio-frequency model has been used, along with SPICE simulations to investigate p-np-n TFETs with RF parameters extracted from TCAD simulation Y-parameters. The results show excellent agreements with the TCAD simulation results for the high frequency range up to the cut-off frequency for the millimeter-wave applications.
Keywords
, Modeling; Nonquasistatic (NQS); Radio, frequency; (RF); p, n, p, n; Tunneling field, effect transistor (TFET).
@inproceedings{paperid:1049303,
author = {Marjani, Saeid and Hosseini, Seyed Ebrahim},
title = {RF Modeling of p-n-p-n Double-Gate Tunneling Field-Effect Transistors},
booktitle = {Third Conference on Millimeter-Wave and Terahertz Technologies (MMWATT), 2014},
year = {2014},
location = {تهران, IRAN},
keywords = {Modeling; Nonquasistatic (NQS); Radio-frequency; (RF); p-n-p-n; Tunneling field-effect transistor (TFET).},
}
%0 Conference Proceedings
%T RF Modeling of p-n-p-n Double-Gate Tunneling Field-Effect Transistors
%A Marjani, Saeid
%A Hosseini, Seyed Ebrahim
%J Third Conference on Millimeter-Wave and Terahertz Technologies (MMWATT), 2014
%D 2014
