German Microwave Conference - GeMiC 2006 - , 2006-03-28

Title : ( A Collector-Up SiGe-HBT for High Frequency Applications )

Authors: Mojtaba Joodaki ,

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Abstract

A new method for realization of a collector-up SiGe-HBT on SOI substrate for high frequency applications is introduced and its dc and ac characteristics are predicted using a two dimensional device simulator. The simulation results show considerable improvements in all aspects of dc current gain, fT, fmax, and maximum available gain/maximum stable gain (MSG/MAG) in comparison with a state of the art emitter-up SiGe-HBT with similar doping profile and germanium content. Another advantage of common-emitter collector-up transistor is that the emitter is connected to the ground and the substrate capacitor is shorted. This provides a higher frequency performance for circuit designs.

Keywords

, SiGe HBTs; RFapplications; collector, up bipolar transistor; RF integrated circuits.
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@inproceedings{paperid:1053993,
author = {Joodaki, Mojtaba},
title = {A Collector-Up SiGe-HBT for High Frequency Applications},
booktitle = {German Microwave Conference - GeMiC 2006 -},
year = {2006},
location = {Karlsruhe, GERMANY},
keywords = {SiGe HBTs; RFapplications; collector-up bipolar transistor; RF integrated circuits.},
}

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%0 Conference Proceedings
%T A Collector-Up SiGe-HBT for High Frequency Applications
%A Joodaki, Mojtaba
%J German Microwave Conference - GeMiC 2006 -
%D 2006

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