مقالات ارائه شده در مجلات

فارسی

  1. سید محمد رضوی , سید حمید ظهیری , سید ابراهیم حسینی , بررسی مشخصه های الکتریکی AlGaN/GaN-HEMT با وارد کردن لایه P در لایه سد در دو سمت سورس و درین, مهندسی برق و مهندسی کامپیوتر ایران, دوره (15), شماره (3), سال (2017-10), صفحات (217-222)
  2. زینب ظهیری , سید ابراهیم حسینی , بهنام کبیریان دهکردی , معرفی یک ترانزیستور دوقطبی جدید بر اساس وارونگی سطحی, مهندسی برق و الکترونیک ایران, دوره (11), شماره (2), سال (2014-10), صفحات (9-13)

انگلیسی

  1. Farshad Yaghouti Niyat , Malihe Zare , Seyed Ebrahim Hosseini , A new and tunable method for the NDR engineering of nanoribbon materials and devices, Materials Science and Engineering B, Volume (296), No (1), Year (2023-10), Pages (116630-116650)
  2. Farshad Yaghouti Niyat , Seyed Ebrahim Hosseini , A novel AGNR/h-BN transistor with tunable negative differential resistance, Physica E, Volume (121), No (1), Year (2020-7), Pages (114110-114110)
  3. Mohamad Hasan Ghasemian Monfared , Seyed Ebrahim Hosseini , Armchair Graphene Nanoribbon Gate-Controllable RTD With Boron Nitride Barriers, IEEE Transactions on Electron Devices, Volume (67), No (11), Year (2020-11), Pages (5209-5215)
  4. davood dadkhah , Mariam Zomorodi-Moghadam , Seyed Ebrahim Hosseini , PAWEL PLAWIAK , XUJUAN ZHOU , Reordering and Partitioning of Distributed Quantum Circuits, IEEE Access, Volume (10), No (1), Year (2022-1), Pages (70329-70341)
  5. davood dadkhah , Mariam Zomorodi-Moghadam , Seyed Ebrahim Hosseini , A New Approach for Optimization of Distributed Quantum Circuits, International Journal of Theoretical Physics, Volume (60), No (9), Year (2021-9), Pages (3271-3285)
  6. Malihe Zare , fatemeh peyravi , Seyed Ebrahim Hosseini , Impact of Hetero-Dielectric Ferroelectric Gate Stack on Analog/RF Performance of Tunnel FET, Journal of Electronic Materials, Volume (49), No (9), Year (2020-9), Pages (5638-5646)
  7. Farshad Yaghouti Niyat , Seyed Ebrahim Hosseini , Malihe Zare , A novel universal tunable method for the NDR engineering of nanoribbon devices; the defect engineering of PNR devices, Materials Science and Engineering B, Volume (274), No (1), Year (2021-12), Pages (115465-115482)
  8. Mahdi Khoshbaten , Seyed Ebrahim Hosseini , Design and AC Modeling of a Bipolar GNR-h-BN RTD With Enhanced Tunneling Properties and High Robustness to Edge Defects, IEEE Transactions on Electron Devices, Volume (66), No (8), Year (2019-8), Pages (3675-3682)
  9. Seyed Ebrahim Hosseini , Mehrdad Shokooh-Saremi , A proposal for an all optical full adder using nonlinear photonic crystal ring resonators, Optik, Volume (199), No (1), Year (2019-12), Pages (163359-163367)
  10. مسعود سلطانی زنجانی , Iman Chaharmahali , صادق بیابانی فرد , Seyed Ebrahim Hosseini , A reconfigurable multi-band, multi-bias THz absorber, Optik, Volume (191), No (1), Year (2019-8), Pages (22-32)
  11. Seyed Ebrahim Hosseini , Mohammad Bagher Tavakoli , Mehrdad Shokooh-Saremi , Application of nonlinear photonic crystal ring resonators in realizing all optical OR/NOT/AND gates, Optical and Quantum Electronics, Volume (51), No (7), Year (2019-7), Pages (228-228)
  12. Mehdi Pakkhesal , Seyed Ebrahim Hosseini , The effect of uniaxial and torsional strains on the density of states of single walled carbon nanotubes, Scientia Iranica, Volume (25), No (3), Year (2018-6), Pages (1608-1615)
  13. Mehdi Pakkhesal , Seyed Ebrahim Hosseini , An Analytical Fifth-Nearest Neighbor Tight-Binding Investigation of the Effect of Mechanical Deformations on SWCNTs, Iranian Journal of Science and Technology-Transactions of Electrical Engineering, Volume (41), No (2), Year (2017-7), Pages (123-130)
  14. Hamdam Ghanatian , Seyed Ebrahim Hosseini , Behzad Zeinali , Farshad Morad , Quasi-Schottky-Barrier UTBB SOI MOSFET for Low-Power Robust SRAMs, IEEE Transactions on Electron Devices, Volume (64), No (4), Year (2017-3), Pages (1575-1582)
  15. saeid marjani , Seyed Ebrahim Hosseini , Rahim Faez , A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio, AIP Advances, Volume (6), No (9), Year (2016-9), Pages (950101-950107)
  16. saeid marjani , Seyed Ebrahim Hosseini , Rahim Faez , A 3D analytical modeling of tri-gate tunneling field-effect transistors, Journal of Computational Electronics, Volume (15), No (3), Year (2016-6), Pages (820-830)
  17. Hamdam Ghanatian , Seyed Ebrahim Hosseini , Analytical modeling of subthreshold swing in undoped trigate SOI MOSFETs, Journal of Computational Electronics, Volume (15), No (2), Year (2016-6), Pages (508-515)
  18. saeid marjani , Seyed Ebrahim Hosseini , Radio-frequency small-signal model of hetero-gate-dielectric p-n-p-n tunneling field effect transistor including charge conservation capacitance and substrate parameters, Journal of Applied Physics, Volume (118), No (9), Year (2015-9), Pages (95708-95708)
  19. Seyed Ebrahim Hosseini , محمد کمالی مقدم , Analytical modeling of a p-n-i-n tunneling field effect transistor, Materials Science in Semiconductor Processing, Volume (30), No (1), Year (2015-1), Pages (56-61)
  20. saeid marjani , Seyed Ebrahim Hosseini , Radio-frequency modeling of square-shaped extended source tunneling field-effect transistors, Superlattices and Microstructures - Micro and Nanostructures, Volume (76), No (12), Year (2014-12), Pages (297-314)
  21. Mahdi Gholizadeh , Seyed Ebrahim Hosseini , A 2-D Analytical Model for Double-Gate Tunnel FETs, IEEE Transactions on Electron Devices, Volume (61), No (5), Year (2014-5), Pages (1494-1500)
  22. M. Kamali Moghadam , Seyed Ebrahim Hosseini , Design and Optimization of a P+N+IN+ Tunnel FET with Si Channel and SiGe Source, International Journal of Academic Research in Applied Science, Volume (1), No (4), Year (2012-4), Pages (67-78)
  23. Saeid Marjani , Rahim Faez , Seyed Ebrahim Hosseini , Analysis of Lattice Temperature Effects on a GaInP/6H-SiC Strained Quantum-Well Lasers, Asian Journal of Chemistry, Volume (25), No (9), Year (2013-9), Pages (4715-4717)
  24. S. M. Razavi , S. H. Zahiri , Seyed Ebrahim Hosseini , A novel AlGaN/GaN HEMT with a p-layer in the barrier, Physica E, Volume (54), No (1), Year (2013-12), Pages (24-29)
  25. S. M. Razavi , S. H. Zahiri , Seyed Ebrahim Hosseini , A novel 4H–SiC MESFET with recessed gate and channel, Superlattices and Microstructures - Micro and Nanostructures, Volume (60), No (1), Year (2013-1), Pages (516-523)
  26. S. M. Razavi , A. Orouji , Seyed Ebrahim Hosseini , Recessed p-buffer layer SiC MESFET: A novel device for improving DC and RF characteristics, Materials Science in Semiconductor Processing, Volume (15), No (5), Year (2012-10), Pages (516-521)
  27. M. Kamali Moghaddam , Seyed Ebrahim Hosseini , Design and Optimization of A P+N+IN+ Tunnel FET, International Journal on Technical and Physical Problems of Engineerin, Volume (4), No (3), Year (2012-9), Pages (95-99)
  28. Rahim Faez , Seyed Ebrahim Hosseini , NOVEL STRUCTURES FOR CARBON NANOTUBE FIELD EFFECT TRANSISTORS, International Journal of modern physics B, Volume (23), No (19), Year (2009-5), Pages (3871-3880)
  29. Iman Abbaspur Kazerouni , Seyed Ebrahim Hosseini , An analytical gate tunneling current model for MOSFETs, Semiconductors, Volume (46), No (3), Year (2012-3), Pages (386-390)
  30. M. K. Anvarifard , Seyed Ebrahim Hosseini , M. G. Armaki , Two-Dimensional Analytical Modeling of Fully Depleted Short-Channel Dual-Gate Silico-on-Insulator Metal Oxide Semiconductor Field Effect Transistor, Japanese Journal of Applied Physics, Volume (48), No (11), Year (2009-11), Pages (7247-7250)
  31. M. G. Armaki , Seyed Ebrahim Hosseini , M. K. Anvarifard , Modeling Semiconductor Device by Using Neuro Space Mapping, Applied Mathematical Modelling, Volume (34), No (1), Year (2010-8), Pages (3430-3438)
  32. S. E. Abtahi Hosseini , Seyed Ebrahim Hosseini , Accurate Analytical Model for Current–Voltage and Small-Signal Characteristics of AlmGa1_mN/GaN Modulation-Doped Field-Effect Transistors, Japanese Journal of Applied Physics, Volume (49), No (8), Year (2010-10), Pages (74302-74306)
  33. I. A. Kazerouni , Seyed Ebrahim Hosseini , M. K. Parashkoh , Analytical modelling of gate tunneling current of MOSFETs based on quantum tunneling, Electronics Letters, Volume (46), No (18), Year (2010-8), Pages (60613-60613)
  34. Ali A. Orouji , S. M. Razavi , Seyed Ebrahim Hosseini , Hamid Amini Moghadam , Investigation of the novel attributes in double recessed gate SiC MESFETs at drain side, Semiconductor Science and Technology, Volume (26), No (11), Year (2011-11), Pages (115001-115005)
  35. Hadi Sadoghi Yazdi , Seyed Ebrahim Hosseini , M. Sadoghi Yazdi , Neuro-fuzzy based constraint programming, Applied Mathematical Modelling, Volume (34), No (11), Year (2010-11), Pages (3547-3559)

مقالات ارایه شده در کنفرانس

فارسی

  1. سید ابراهیم حسینی , مصطفی کنعان آذر , بررسی اثر توزیع تصادفی ناخالصی در ترانزیستورهای بدون پیوند , دوازدهمین کنفرانس ماده چگال انجمن فیزیک ایران , 2015-01-28
  2. محمد حسین غلامیان , سید ابراهیم حسینی , بررسی اثر هال در صفحه گرافین برای نانو سنسورهای مغناطیسی در تکنولوژی CMOS , دوازدهمین کنفرانس ماده چگال انجمن فیزیک ایران , 2015-01-28
  3. مهدی قلی زاده , سید ابراهیم حسینی , ارائه یک مدل تحلیلی دو بعدی برای مشخصه جریان درین-ولتاژ گیت در ترانزیستور تونلی دو گیتی , کنفرانس فیزیک ایران , 2013-08-25
  4. حمیده ذوالفقاری , سید ابراهیم حسینی , بررسی اثر تابع کار سه فلزی بر عملکرد FinFET با کانال احاطه شده توسط گیت , بیستمین کنفرانس مهندسی برق , 2012-05-16
  5. سید ابراهیم حسینی , A. Ghasemi , بررسی مشخصه منفی در ترانزیستور لایه نازک , کنفرانس فیزیک ایران , 2009-08-15
  6. فرانک همایونی , سید ابراهیم حسینی , یک BJT جانبی لایه نازک با بهره بالا بر روی زیرپایه SOI , هجدهمین کنفرانس مهندسی برق ایران , 2010-05-11
  7. سید ابراهیم حسینی , ارائه یک ترانزیستور دوقطبی با کنترل بهره , هجدهمین کنفرانسمهندسی برق , 2010-05-11
  8. ایمان عباس پور کازرونی , سید ابراهیم حسینی , محسن خانی پرشکوه , محاسبه جریان تونل زنی اکسید گیت درMOSFET های کانال کوتاه , هجدهمین کنفرانس مهندسی برق , 2010-05-11
  9. زهرا ابراهیمی , سید ابراهیم حسینی , بررسی عملکرد یک ترانزیستور ترکیبی BJT و FET لایه نازک , کنفرانس فیزیک ایران 1389 , 2010-08-28
  10. زینب ظهیری , سید ابراهیم حسینی , بهنام کبیریان دهکردی , معرفی یک ترانزیستور دوقطبی جدید بر اساس وارونگی سطحی , کنفرانس فیزیک ایران 1389 , 2010-08-28
  11. مهدی گردی ارمکی , سید ابراهیم حسینی , تصحیح کوانتومی ادوات نیمه هادی با نگاشت فضایی عصبی , دهمین کنفرانس ماده چگال ایران , 2011-01-26

انگلیسی

  1. farshad mohajer , Seyed Ebrahim Hosseini , A New Graphene Nanoribbon based Resonant Tunneling Diodes using BN Quantum Well , بیست و هفتمین کنفرانس مهندسی ایران , 2019-05-15
  2. سید محمد رضوی , Seyed Ebrahim Hosseini , Investigation of A I GaNIGaN HEMTs with step aluminum mole fraction and doping level in the barrier layer , بیست و پنجمین کنفرانس مهندسی برق ایران , 2017-05-02
  3. Hamdam Ghanatian , Seyed Ebrahim Hosseini , Analytical modeling of potential distribution in trigate SOI MOSFETs , بیست و سومین کنفرانس مهندسی برق ایران 94 , 2015-05-10
  4. saeid marjani , Seyed Ebrahim Hosseini , Analysis of Radio Frequency and Stability Performance on Double-Gate Extended Source Tunneling Field-Effect Transistors , بیست و سومین کنفرانس مهندسی برق ایران، 1394، دانشگاه صنعتی شریف , 2015-05-10
  5. saeid marjani , Seyed Ebrahim Hosseini , RF Modeling of p-n-p-n Double-Gate Tunneling Field-Effect Transistors , Third Conference on Millimeter-Wave and Terahertz Technologies (MMWATT), 2014 , 2014-12-30
  6. saeid marjani , Seyed Ebrahim Hosseini , A Novel Double Gate Tunnel Field Effect Transistor with 9 mV/dec Average Subthreshold Slope , The 22nd Iranian Conference on Electrical Engineering (ICEE 2014) , 2014-05-20
  7. saeid marjani , Seyed Ebrahim Hosseini , Analysis of radio frequency and stability performance on double-gate extended source tunneling field-effect transistors , بیست و سومین کنفرانس مهندسی برق ایران , 2015-05-10
  8. M. R. Salehi , E. Abiri , Seyed Ebrahim Hosseini , B. Dorostkar , Analysis and optimization of Tunnel FET with Band gap Engineering , بیست و یکمین کنفرانس مهندسی برق ایران , 2013-05-14
  9. M. R. Salehi , E. Abiri , Seyed Ebrahim Hosseini , B. Dorostkar , Design of tunneling field-effect transistor (TFET) with AlGaAs/InGaAs hetero-junction , بیست و یکمین کنفرانس مهندسی برق ایران , 2013-05-14
  10. saeid marjani , Seyed Ebrahim Hosseini , رحیم فائز , Threshold characteristics analysis of InP-based PhC VCSEL with buried tunnel junction , بیست و یکمین کنفرانس مهندسی برق ایران , 2013-05-14
  11. M.Kamali Moghaddam , Seyed Ebrahim Hosseini , INVESTIGATION OF A NOVEL P+N+IN+ TUNNEL FET , 8th International Conference on Technical and Physical Problems of Power Engineering , 2012-09-05
  12. M.A. Moradian , Seyed Ebrahim Hosseini , IMPROVED SHORT CHANNEL EFFECTS IN 4H-SIC MOSFET WITH DUAL MATERIAL GATE STRUCTURE , 8th International Conference on Technical and Physical Problems of Power Engineering , 2012-09-05
  13. mahdi gordi armaki , Seyed Ebrahim Hosseini , javad haddadnia , Modeling SOI-MOSFET Using Neuro Space Mapping , IEEE International Conference on Electron Devices and Solid-State Circuits , 2009-11-25
  14. Jafar Ahadzadeh Farhood , Seyed Ehsan Abtahi , Seyed Ebrahim Hosseini , The Effects of Random Distribution Fluctuations of Dopants on SOI-MOSFET Performance , IEEE International Conference on Electron Devices and Solid-State Circuits , 2009-11-25
  15. M. Khani Parashloh , Seyed Ebrahim Hosseini , I. abaspur kazerouni , Reducing Short Channel Effects in Dual Gate SOI-MOSFETs with a Drain Dependent Gate Bias , هجدهمین کنفرانس مهندسی برق ایران , 2010-05-11
  16. M. Razavi , Ali A. Orouji , Seyed Ebrahim Hosseini , DC and RF characteristics of SiC MESFETs with different channel doping concentrations under the gate , ECAI 2011 - International Conference – 4th Edition Electronics, Computers and Artificial Intelligence , 2011-06-30
  17. M. Razavi , Ali A. Orouji , Seyed Ebrahim Hosseini , A novel SiC MESFET with recessed P-Buffer layer , ECAI 2011 - International Conference – 4th Edition Electronics, Computers and Artificial Intelligence , 2011-06-30
  18. Abolfazl Rahmani , Omid Seryasat , Seyed Ebrahim Hosseini , Numerical Investigate of Base Doping for Minimum Base Transit Time , 2010 2nd International Conference on Software Technology and Engineering (ICSTE) , 2010-08-01
  19. A.S.Nilsaz , Seyed Ebrahim Hosseini , H Zolfaghari , IMPROVED PERFORMANCE OF 4H-SIC MESFETS USING MIDDLE RECESSED STRUCTURE WITH DUAL CHANNEL LAYER , 7th International Conference on Technical and Physical Problems of Power Engineering , 2011-07-07

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