@article{paperid:1010094,
author = {Rezaee Roknabadi, Mahmood and Arabshahi, Hadi and M. R. Benam},
title = {COMPARISON OF LOW FIELD ELECTRON TRANSPORT IN SiC AND GaN STRUCTURES FOR HIGH-POWER AND HIGH-TEMPERATURE DEVICE MODELING},
journal = {Modern Physics Letters B},
year = {2008},
volume = {22},
number = {13},
month = {August},
issn = {0217-9849},
pages = {1357--1366},
			numpages = {9},
keywords = {iterative; Relaxation-time},
}