@article{paperid:1023173,
author = {M. Mahmoodi and Arabshahi, Hadi},
title = {Monte Carlo Simulation of Electron Transport Properties in Submicron GaN and ZnO n+-n –n+ Diodes},
journal = {International Journal of Science and Advanced Technology},
year = {2011},
volume = {1},
number = {6},
month = {August},
issn = {2221-8386},
pages = {64--67},
			numpages = {3},
keywords = {Steady-state; active layer; electron drift velocity.},
}