@article{paperid:1023754,
author = {Arabshahi, Hadi},
title = {A Study of Gate Length and Source-Drain Bias on Electron Transport Properties in SiC Based MOSFETs Using Monte Carlo Method},
journal = {International Journal of Electrical and Computer Engineering-IJECE},
year = {2011},
volume = {1},
number = {1},
month = {September},
issn = {2088-8708},
pages = {17--20},
			numpages = {3},
keywords = {Ensemble Monte Carlo; channel length; transconductance; Brillouin zone.},
}