@inproceedings{paperid:1026914,
author = {M. Razavi and Ali A. Orouji and Hosseini, Seyed Ebrahim},
title = {DC and RF characteristics of SiC MESFETs with different channel doping concentrations under the gate},
booktitle = {ECAI 2011 - International Conference – 4th Edition Electronics, Computers and Artificial Intelligence},
year = {2011},
location = {Pitesti},
keywords = {SiC MESFET; Channel Doping Concentration; Breakdown Voltage; Gate-Source Capacitance; DC Trans-Conductance; Short Channel Effect.},
}