@inproceedings{paperid:1026917,
author = {M. Khani Parashloh and Hosseini, Seyed Ebrahim and I. Abaspur Kazerouni},
title = {Reducing Short Channel Effects in Dual Gate SOI-MOSFETs with a Drain Dependent Gate Bias},
booktitle = {هجدهمین کنفرانس مهندسی برق ایران},
year = {2010},
location = {اصفهان, IRAN},
keywords = {Drain dependent gate voltage; short-channel effects (SCEs); hot carriers; drain induced barrier lowering (DIBL)},
}