@article{paperid:1034122,
author = {S. M. Razavi and A. Orouji and Hosseini, Seyed Ebrahim},
title = {Recessed p-buffer layer SiC MESFET: A novel device for improving DC and RF characteristics},
journal = {Materials Science in Semiconductor Processing},
year = {2012},
volume = {15},
number = {5},
month = {October},
issn = {1369-8001},
pages = {516--521},
			numpages = {5},
keywords = {Recessed p-buffer; SiC MESFET; Gate–source capacitance; DC trans-conductance; Short channel effects;
Cut-off frequency; Breakdown voltage},
}