@inproceedings{paperid:1037967,
author = {M. R. Salehi and E. Abiri and Hosseini, Seyed Ebrahim and B. Dorostkar},
title = {Design of tunneling field-effect transistor (TFET) with AlGaAs/InGaAs hetero-junction},
booktitle = {بیست و یکمین کنفرانس مهندسی برق ایران},
year = {2013},
location = {مشهد, IRAN},
keywords = {band-to-band tunneling; high-k dielectric; hetero-junction; gated p-i-n diode; sub threshold swing;
tunneling transistor},
}