@article{paperid:1041122,
author = {Gholizadeh, Mahdi and Hosseini, Seyed Ebrahim},
title = {A 2-D Analytical Model for Double-Gate Tunnel FETs},
journal = {IEEE Transactions on Electron Devices},
year = {2014},
volume = {61},
number = {5},
month = {May},
issn = {0018-9383},
pages = {1494--1500},
			numpages = {6},
keywords = {Analytical model; band-to-band tunneling; (BTBT); BTBT generation rate; double-gate (DG) tunnel field
effect transistor (TFET); electric field; mobile charge; Poisson’s equation; subthreshold swing (SS).},
}