@article{paperid:1045836,
author = {FARKHANI, HOOMAN and Peiravi, Ali and FARSHAD MORADI},
title = {A new asymmetric 6T SRAM cell with a write assist technique in 65 nm CMOS technology},
journal = {Microelectronics Journal},
year = {2014},
volume = {45},
number = {11},
month = {December},
issn = {1879-2391},
pages = {1556--1565},
			numpages = {9},
keywords = {SRAM; Write Margin; ReadStaticNoiseMargin; CMOS},
}