@article{paperid:1058988,
author = {Marjani, Saeid and Hosseini, Seyed Ebrahim and Rahim Faez},
title = {A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio},
journal = {AIP Advances},
year = {2016},
volume = {6},
number = {9},
month = {September},
issn = {2158-3226},
pages = {950101--950107},
			numpages = {6},
keywords = {tunneling FET; hafnium oxide; SOI},
}