@article{paperid:1062196,
author = {Ghanatian, Hamdam and Hosseini, Seyed Ebrahim and Behzad Zeinali and Farshad Morad},
title = {Quasi-Schottky-Barrier UTBB SOI MOSFET for Low-Power Robust SRAMs},
journal = {IEEE Transactions on Electron Devices},
year = {2017},
volume = {64},
number = {4},
month = {March},
issn = {0018-9383},
pages = {1575--1582},
			numpages = {7},
keywords = {Asymmetric device; Schottky barrier (SB); split bitline (BL); static random access memory (SRAM);
ultrathin buried oxide (UTBB) silicon-on-insulator (SOI) device},
}