@inproceedings{paperid:1064279,
author = {سید محمد رضوی and Hosseini, Seyed Ebrahim},
title = {Investigation of A I GaNIGaN HEMTs with step aluminum mole fraction and doping level in the barrier layer},
booktitle = {بیست و پنجمین کنفرانس مهندسی برق ایران},
year = {2017},
location = {تهران, IRAN},
keywords = {GaN HEMT; Gate-source capacitance; Breakdown voltage; DC output conductance; maximum DC trans-conductance},
}