@article{paperid:1078660,
author = {Khoshbaten, Mahdi and Hosseini, Seyed Ebrahim},
title = {Design and AC Modeling of a Bipolar GNR-h-BN RTD With Enhanced Tunneling Properties and High Robustness to Edge Defects},
journal = {IEEE Transactions on Electron Devices},
year = {2019},
volume = {66},
number = {8},
month = {August},
issn = {0018-9383},
pages = {3675--3682},
			numpages = {7},
keywords = {Circuit modeling; bipolar doping; boron nitride (BN); graphene; resonant tunneling diodes (RTDs);
robust to defects.},
}