@article{paperid:1102059,
author = {Ahmadi Kakhki, Farzaneh and Hosseini, Seyed Ebrahim},
title = {Electrostatically doped ballistic transition metal dichalcogenide tunnel field-effect transistors},
journal = {Journal of Materials Science: Materials in Electronics},
year = {2024},
volume = {35},
number = {12},
month = {April},
issn = {0957-4522},
keywords = {مواد دو بعدی، ترانزیستور اثر میدان تونلی، دی کالکوژنیدهای فلزات واسطه، ناخالص‌سازی الکترواستاتیک},
}