%0 Conference Proceedings
%T Technological requirements for a self-aligned lateral SiGe HBT with the SiGe layer formed by Ge ion implantation in Si including theoretical performance
%A Joodaki, Mojtaba
%A  H. Hillmer
%J 8th International Conference on Solid-State and Integrated Circuit Technology, 2006. ICSICT \'06.
%D 2006