%0 Journal Article
%T A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio
%A Marjani, Saeid
%A  Hosseini, Seyed Ebrahim
%A  Rahim Faez
%J AIP Advances
%@ 2158-3226
%D 2016