%0 Journal Article
%T Perpendicular STT_RAM cell in 8 nm technology node using Co1/Ni3(1 1 1)||Gr2||Co1/Ni3(1 1 1) structure as magnetic tunnel junction
%A Varghani, Ali
%A  Peiravi, Ali
%A  Farshad Moradi
%J Journal of Magnetism and Magnetic Materials
%@ 0304-8853
%D 2018