Title : ( Pi-shaped MEMS architecture for lowering actuation voltage of RF switching )
Authors: Yasser Mafinejad , Abbas Z. Kouzani , Khlil Mafinezhad , abbas golmakani ,
Full TextAbstract
Abstract: A wide band low actuation capacitive coupling electrostatic RF MEMS switching device is presented in this paper. The device includes a pi-shaped matching architecture containing two switches connected by a short high impedance transmission line. The device can act as a switch for any desired frequency whilst requiring only 12 volts for actuation. By optimizing the length and the characteristic impedance of the transmission line, the switch can be tailored for desired frequency bands. The switch is calculated and simulated for Ka to V frequency bands demonstrating excellent improvements of RF characteristics.
Keywords
, Keywords: RF MEMS switch, actuation voltage, RF characteristics, pi matching architecture
@article{paperid:1012676,
author = {Yasser Mafinejad and Abbas Z. Kouzani and Mafinezhad, Khlil and Golmakani, Abbas},
title = {Pi-shaped MEMS architecture for lowering actuation voltage of RF switching},
journal = {IEICE Electronics Express},
year = {2009},
volume = {6},
number = {20},
month = {October},
issn = {1349-2543},
pages = {1483--1489},
numpages = {6},
keywords = {Keywords: RF MEMS switch; actuation voltage; RF characteristics; pi matching architecture},
}
%0 Journal Article
%T Pi-shaped MEMS architecture for lowering actuation voltage of RF switching
%A Yasser Mafinejad
%A Abbas Z. Kouzani
%A Mafinezhad, Khlil
%A Golmakani, Abbas
%J IEICE Electronics Express
%@ 1349-2543
%D 2009
