Title : ( Hot electron of steady-state transport in submicrometer ZnSe and ZnS n+-i(n)-n+ diodes )
Authors: Hadi Arabshahi , Mahmood Rezaee Roknabadi , fatemeh badieian baghsiyahi , M.R. Khalvati ,
Full TextAbstract
Monte Carlo simulation of steady-state electron transport in ZnSe and ZnS diodes of n+-i(n)-n+ structure with a 0.2 µm active layer length is described. The anode voltage ranges from 1 to 5 V. The distributions of electron energies and electron velocities, and the profiles of the electron density, electric field, potential and average electron velocity are computed. Based on these data, the near ballistic nature of the electron transport in the 0.2 µm long diode and the importance of the back-scattering of electrons from the anode n+-layer are discussed. Also, the effects of the lattice temperature and doping on the length of the active layer are discussed. Our calculations show that electron reach to a
Keywords
, Active layer, diode, drift velocity, ballistic.
@article{paperid:1014154,
author = {Arabshahi, Hadi and Rezaee Roknabadi, Mahmood and Badieian Baghsiyahi, Fatemeh and M.R. Khalvati},
title = {Hot electron of steady-state transport in submicrometer ZnSe and ZnS n+-i(n)-n+ diodes},
journal = {Indian Journal of Science and Technology},
year = {2010},
volume = {3},
number = {1},
month = {January},
issn = {0974-6846},
pages = {37--40},
numpages = {3},
keywords = {Active layer; diode; drift velocity; ballistic.},
}
%0 Journal Article
%T Hot electron of steady-state transport in submicrometer ZnSe and ZnS n+-i(n)-n+ diodes
%A Arabshahi, Hadi
%A Rezaee Roknabadi, Mahmood
%A Badieian Baghsiyahi, Fatemeh
%A M.R. Khalvati
%J Indian Journal of Science and Technology
%@ 0974-6846
%D 2010
