Electron drift velocity simulation results are presented for bulk GaSb, Ga0.5Sb0.5As and GaAs based on a three-valley Monte Carlo model. Our velocity-field results at 300 K are in good agreement with available experimental data. It is found that GaSb exhibits an extremely low peak drift velocity at room temperature 0.25×105 ms-1, at a doping concentration of 1017 cm-3 in comparison to GaAs. All dominant scattering mechanisms in the structure considered have been taken into account. For all materials, it is found that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical filed, unique to each material. This critical field is strongly dependent on the material parameters.

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