The gate tunneling current of MOSFETs is an important factor in modeling ultra-small devices. In this reported work, the gate tunneling current in present-generation MOSFETs is studied. Presented is a model for the gate tunneling current in MOSFETs having ultra-thin gate oxides. In the proposed model, the electron wave function at the semiconductor–oxide interface is calculated and inversion charge by assuming the inversion layer as a potential well, including some simplifying assumptions. Then the gate tunneling current is calculated using the calculated wave function. The proposed model results have excellent agreement with experimental results in the literature.

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