Title : ( Two-Dimensional Analytical Modeling of Fully Depleted Short-Channel Dual-Gate Silico-on-Insulator Metal Oxide Semiconductor Field Effect Transistor )
Authors: M. K. Anvarifard , Seyed Ebrahim Hosseini , M. G. Armaki ,
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Abstract
In this paper, a two-dimensional (2D) analytical model of the surface potential variation along the channel in a fully depleted dual-gate (DG) silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) is proposed to investigate short-channel effects (SCEs). Our model includes the length of the two gates and the voltage difference between them. We demonstrate that the surface potential in the channel region exhibits a step function, which causes the screening of the drain potential. This results in suppressed SCEs such as the hot-carrier effect and drain-induced barrier lowering DIBL). The obtained results of our model are compared with those of the single-gate (SG) SOI MOSFET, and the DG SOI MOSFET performance is found to be superior.
Keywords
, SOI, Dual gate, analytic modeling, MOSFET
@article{paperid:1024503,
author = {M. K. Anvarifard and Hosseini, Seyed Ebrahim and M. G. Armaki},
title = {Two-Dimensional Analytical Modeling of Fully Depleted Short-Channel Dual-Gate Silico-on-Insulator Metal Oxide Semiconductor Field Effect Transistor},
journal = {Japanese Journal of Applied Physics},
year = {2009},
volume = {48},
number = {11},
month = {November},
issn = {0021-4922},
pages = {7247--7250},
numpages = {3},
keywords = {SOI; Dual gate; analytic modeling; MOSFET},
}
%0 Journal Article
%T Two-Dimensional Analytical Modeling of Fully Depleted Short-Channel Dual-Gate Silico-on-Insulator Metal Oxide Semiconductor Field Effect Transistor
%A M. K. Anvarifard
%A Hosseini, Seyed Ebrahim
%A M. G. Armaki
%J Japanese Journal of Applied Physics
%@ 0021-4922
%D 2009
