Abstract— We performed a two-dimensional ensemble Monte Carlo simulation of a n+ -i(n)-n+ diode based on InP material in comparison with hydrodynamic model. Scattering processes taken into account are polar optical phonon scattering, acoustic phonon scattering, piezo- electric scattering, intervalley phonon scattering, non- polar optical phonon scattering and the ionized impurity scattering. The carrier transport phenomena in the submicron sized device is illustrated by the distribution of over 100000 particles in two dimensional device structure. Channel electrons can reach velocities that largely exceed the saturation velocity (velocity overshoot). Such effect guarantees very fast transit times in submicron structures. The electric field is determined self-consistently from the Poisson equation. Numerical results are presented by two models. Based on these data, the excellent agreement of the hydrodynamic approach with Monte Carlo simulations is discussed.

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