This research aims to expand the knowledge related to the thermoelectric effi-ciency of Bi2Te2.7Se0.3 thin films in order to enhance the property. Therefore, inthe present study, Bi2Te2.7Se0.3 thin films were fabricated by mechanical alloyingand thermal evaporation procedures. The effects of deposition parametersincluding the substrate temperature and the annealing temperature on the x-raydiffraction pattern, microstructure, and optical and thermoelectric propertieswere evaluated. The results showed that the substrate temperature and theannealing temperature are effective on microstructure, crystallinity, chemicalcomposition and thermoelectric properties of thin films. All of the samplesshowed the p-type conductor due to the presence of antisites in the samples(BiTe as acceptors and hole producers). Among the samples, the thin filmdeposited at the substrate temperature of 50 °C and annealed at 50 °C(BS50A50) showed the significant increment in the power factor (0.88 lW/K2cm) Moreover, the thin film showed the favorable Seebeck coefficient (59 lV/K)and electrical conductivity (257 S/cm). The results were due to the homogeneity,crystallinity and tiny pores of the sample BS50A50.

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