Gate tunneling current of MOSFETs is an important factor in modeling ultra small devices. In this paper, gate tunneling in present generation MOSFETs is studied. In the proposed model, we calculate the electron wave function at the semiconductor–oxide interface and inversion charge by treating the inversion layer as a potential well, including some simplifying assumptions. Then we compute the gate tunneling current using the calculated wave function. The proposed model results have an excellent agreement with experimental results in the literature.

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