نمایش نتایج جستجو برای
نویسنده: ali varghani
موارد یافت شده: 3
1 - Perpendicular STT_RAM cell in 8 nm technology node using Co1/Ni3(1 1 1)||Gr2||Co1/Ni3(1 1 1) structure as magnetic tunnel junction (چکیده)2 - Graphene-Based STT-RAM Cell With Improved Switching for Scaled Technology Nodes (چکیده)
3 - A graphite based STT-RAM cell with reduction in switching current (چکیده)