Brazilian Journal of Physics, ( ISI ), Volume (38), No (3), Year (2008-2) , Pages (293-296)

Title : ( Temperature and Doping Dependencies of Electron Mobility in InAs, AlAs,and AlGaAs at High Electric Field Application )

Authors: Hadi Arabshahi , م.ر خلوتی , Mahmood Rezaee Roknabadi ,
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Abstract

Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs structures have been calculated using an ensemble Monte Carlo simulation

Keywords

, electron mobility; steady, state