Title : ( Temperature and Doping Dependencies of Electron Mobility in InAs, AlAs,and AlGaAs at High Electric Field Application )
Authors: Hadi Arabshahi , م.ر خلوتی , Mahmood Rezaee Roknabadi ,
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Abstract
Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs structures have been calculated using an ensemble Monte Carlo simulation
Keywords
, electron mobility; steady, state
@article{paperid:1006236,
author = {Arabshahi, Hadi and م.ر خلوتی and Rezaee Roknabadi, Mahmood},
title = {Temperature and Doping Dependencies of Electron Mobility in InAs, AlAs,and AlGaAs at High Electric Field Application},
journal = {Brazilian Journal of Physics},
year = {2008},
volume = {38},
number = {3},
month = {February},
issn = {0103-9733},
pages = {293--296},
numpages = {3},
keywords = {electron mobility; steady-state},
}
%0 Journal Article
%T Temperature and Doping Dependencies of Electron Mobility in InAs, AlAs,and AlGaAs at High Electric Field Application
%A Arabshahi, Hadi
%A م.ر خلوتی
%A Rezaee Roknabadi, Mahmood
%J Brazilian Journal of Physics
%@ 0103-9733
%D 2008
