Title : ( COMPARISON OF TRANSIENT BALLISTIC ELECTRON TRANSPORT IN BULK WURTZITE PHASE 6H-SiC and GaN )
Authors: Hadi Arabshahi ,Access to full-text not allowed by authors
Abstract
An ensemble Monte Carlo simulation is used to compare bulk electron ballistic transport in 6H-SiC and GaN materials. Electronic states within the conduction band valleys at
Keywords
Transient ballistic; velocity overshoot; saturation drift velocity.@article{paperid:1009972,
author = {Arabshahi, Hadi},
title = {COMPARISON OF TRANSIENT BALLISTIC ELECTRON TRANSPORT IN BULK WURTZITE PHASE 6H-SiC and GaN},
journal = {International Journal of modern physics B},
year = {2008},
volume = {22},
number = {30},
month = {November},
issn = {0217-9792},
pages = {5289--5297},
numpages = {8},
keywords = {Transient ballistic; velocity overshoot; saturation drift velocity.},
}
%0 Journal Article
%T COMPARISON OF TRANSIENT BALLISTIC ELECTRON TRANSPORT IN BULK WURTZITE PHASE 6H-SiC and GaN
%A Arabshahi, Hadi
%J International Journal of modern physics B
%@ 0217-9792
%D 2008