Title : ( Effect of Polarization Charges and Trapping Centreson Electron Transport Properties ofAlGaN/GaN HFETs )
Authors: Hadi Arabshahi ,
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Abstract
Self-consistent Monte Carlo simulation has been developed and used to model electron transport in wurtzite phase AlGaN/GaN heterojunction FETs. Planer Al0.2Ga0.8N/GaN HFET structures with a 78 nm Al0.2Ga0.8N pseudomorphically strained layer were simulated, where the spontaneous and piezoelectric polarization effects were taken into account. The polarization effects was shown to not only increase the current density, but also improve the electron transport in the interface layer by inducing a higher electron density to the positive polarized sheet and away from the buffer layer.
Keywords
, Monte Carlo, Heterjunction, Hfets, Polarization
@article{paperid:1009981,
author = {Arabshahi, Hadi},
title = {Effect of Polarization Charges and Trapping Centreson Electron Transport Properties ofAlGaN/GaN HFETs},
journal = {International Journal of Pure and Applied Physics},
year = {2006},
month = {April},
issn = {0973-1776},
keywords = {Monte Carlo; Heterjunction; Hfets; Polarization},
}
%0 Journal Article
%T Effect of Polarization Charges and Trapping Centreson Electron Transport Properties ofAlGaN/GaN HFETs
%A Arabshahi, Hadi
%J International Journal of Pure and Applied Physics
%@ 0973-1776
%D 2006
