Brazilian Journal of Physics, ( ISI ), Volume (39), No (1), Year (2009-2) , Pages (35-38)

Title : ( Potential Performance of SiC and GaN Based Metal Semiconductor Field Effect Transistor )

Authors: Hadi Arabshahi ,
File: Full Text

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Abstract

A Monte Carlo Simlation has been used to model staedy state

Keywords

, balistic Transport, Frequency Response, steay-state
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@article{paperid:1010252,
author = {Arabshahi, Hadi},
title = {Potential Performance of SiC and GaN Based Metal Semiconductor Field Effect Transistor},
journal = {Brazilian Journal of Physics},
year = {2009},
volume = {39},
number = {1},
month = {February},
issn = {0103-9733},
pages = {35--38},
numpages = {3},
keywords = {balistic Transport; Frequency Response; steay-state},
}

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%0 Journal Article
%T Potential Performance of SiC and GaN Based Metal Semiconductor Field Effect Transistor
%A Arabshahi, Hadi
%J Brazilian Journal of Physics
%@ 0103-9733
%D 2009

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