Title : ( COMPUTER SIMULATION OF ZnO FIELD-EFFECT TRANSISTOR FOR HIGH-POWER AND HIGH-TEMPERATURE APPLICATIONS USING THE MONTE CARLO METHOD )
Authors: Hadi Arabshahi ,
Full TextAbstract
The steady-state and transient electron transport in ZnO field effect transistor have been studied using an ensemble Monte Carlo simulation which takes into account the hot-electron transport phenomena. The simulated device geometries and doping are matched to the nominal parameters described for the experimental structures as closely as possible, and the predicted I–V and transfer charateristics for the intrinsic devices show fair agreement with the available experimental data. Simulations of the effect of modulating the gate bias have also been carried out to test the device response and derived the frequency bandwidth. The value of 80 ± 5 GHz has been derived for the intrinsic current gain cut-off frequency of the ZnO MESFETs.
Keywords
, Steady, state; transient; cut, off frequency; frequency bandwidth
@article{paperid:1011327,
author = {Arabshahi, Hadi},
title = {COMPUTER SIMULATION OF ZnO FIELD-EFFECT TRANSISTOR FOR HIGH-POWER AND HIGH-TEMPERATURE APPLICATIONS USING THE MONTE CARLO METHOD},
journal = {Modern Physics Letters B},
year = {2009},
volume = {23},
number = {8},
month = {February},
issn = {0217-9849},
pages = {1101--1109},
numpages = {8},
keywords = {Steady-state; transient; cut-off frequency; frequency bandwidth},
}
%0 Journal Article
%T COMPUTER SIMULATION OF ZnO FIELD-EFFECT TRANSISTOR FOR HIGH-POWER AND HIGH-TEMPERATURE APPLICATIONS USING THE MONTE CARLO METHOD
%A Arabshahi, Hadi
%J Modern Physics Letters B
%@ 0217-9849
%D 2009
