An ensemble Monte Carlo simulation has been used to model bulk electron transport at room and higher temperatures as a function of high electric fields in GaInP and AlGaInP materials. Electronic states within the conduction band valleys at the Γ, X and L are represented by non-parabolic ellipsoidal valleys centered on important symmetry points of the Brillouin zone. The simulation shows that inter-valley electron transfer plays a dominant role in GaInP in high electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. Our simulation results have also shown that the electron velocity in AlGaInP is less sensitive to temperature than in GaInP. So, AlGaInP devices are expected be more tolerant to self-heating and high ambient temperature device modeling. Our steady state velocity-field characteristics are in fair agreement with other recent calculations.

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