Title : ( Temperature and doping dependencies of hot electron transport properties in bulk GaP, InP and Ga0.5In0.5P )
Authors: A. Mokhles Gerami , H.Rahimpour Soleimani , Hadi Arabshahi , M. R. Khalvati ,
Full TextAbstract
ensemble Monte Carlo simulation has been carriedout to study electron transport properties in GaP, InP and Ga0.5In0.5P materials. The simulation results show that intervalley electron transfer plays a dominant role in higher electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. In addition, the electron velocity in GaP is less sensitive to temperature than other group III-V semiconductors like InP and Ga0.5In0.5P. So GaP devices are expected to be more tolerant to
Keywords
Ensemble Monte Carlo; polar optical phonons;
@article{paperid:1013110,
author = {A. Mokhles Gerami and H.Rahimpour Soleimani and Arabshahi, Hadi and M. R. Khalvati},
title = {Temperature and doping dependencies of hot electron transport properties in bulk GaP, InP and Ga0.5In0.5P},
journal = {Indian Journal of Science and Technology},
year = {2009},
volume = {2},
number = {10},
month = {October},
issn = {0974-6846},
pages = {10--13},
numpages = {3},
keywords = {Ensemble Monte Carlo; polar optical phonons;},
}
%0 Journal Article
%T Temperature and doping dependencies of hot electron transport properties in bulk GaP, InP and Ga0.5In0.5P
%A A. Mokhles Gerami
%A H.Rahimpour Soleimani
%A Arabshahi, Hadi
%A M. R. Khalvati
%J Indian Journal of Science and Technology
%@ 0974-6846
%D 2009
