World Applied Sciences Journal, ( ISI ), Volume (7), No (11), Year (2009-7) , Pages (1401-1402)

Title : ( Al2O3 Potential as a Gate Dielectric of the Next Nano MISFET Transistor )

Authors: Mandana Roodbari Shahmiri , Mahmood Rezaee Roknabadi , Nasser Shahtahmassebi ,

Citation: BibTeX | EndNote

The current gate dielectric thickness of MOSFET (metal- oxide-semiconductor-field-effect-transistor) is down to 1 nm which can not prevent boron diffusion from electrodes through the ultra thin gate oxide.

Keywords

, Thin film, Nanostructure, Al2O3 and surface sensitive
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@article{paperid:1015584,
author = {Roodbari Shahmiri, Mandana and Rezaee Roknabadi, Mahmood and Shahtahmassebi, Nasser},
title = {Al2O3 Potential as a Gate Dielectric of the Next Nano MISFET Transistor},
journal = {World Applied Sciences Journal},
year = {2009},
volume = {7},
number = {11},
month = {July},
issn = {1818-4952},
pages = {1401--1402},
numpages = {1},
keywords = {Thin film-Nanostructure-Al2O3 and surface sensitive technique},
}

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%0 Journal Article
%T Al2O3 Potential as a Gate Dielectric of the Next Nano MISFET Transistor
%A Roodbari Shahmiri, Mandana
%A Rezaee Roknabadi, Mahmood
%A Shahtahmassebi, Nasser
%J World Applied Sciences Journal
%@ 1818-4952
%D 2009

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