Title : ( Al2O3 Potential as a Gate Dielectric of the Next Nano MISFET Transistor )
Authors: Mandana Roodbari Shahmiri , Mahmood Rezaee Roknabadi , Nasser Shahtahmassebi ,
Full TextAbstract
The current gate dielectric thickness of MOSFET (metal- oxide-semiconductor-field-effect-transistor) is down to 1 nm which can not prevent boron diffusion from electrodes through the ultra thin gate oxide.
Keywords
, Thin film, Nanostructure, Al2O3 and surface sensitive technique
@article{paperid:1015584,
author = {Roodbari Shahmiri, Mandana and Rezaee Roknabadi, Mahmood and Shahtahmassebi, Nasser},
title = {Al2O3 Potential as a Gate Dielectric of the Next Nano MISFET Transistor},
journal = {World Applied Sciences Journal},
year = {2009},
volume = {7},
number = {11},
month = {July},
issn = {1818-4952},
pages = {1401--1402},
numpages = {1},
keywords = {Thin film-Nanostructure-Al2O3 and surface sensitive technique},
}
%0 Journal Article
%T Al2O3 Potential as a Gate Dielectric of the Next Nano MISFET Transistor
%A Roodbari Shahmiri, Mandana
%A Rezaee Roknabadi, Mahmood
%A Shahtahmassebi, Nasser
%J World Applied Sciences Journal
%@ 1818-4952
%D 2009
