Title : ( Monte Carlo Simulation of Steady-State Transport in Submicrometer InP and GaAs n+ i(n) n+ Diode )
Authors: Hadi Arabshahi , Mahmood Rezaee Roknabadi , fatemeh badieian baghsiyahi , M. R. Khalvati ,
Full TextAbstract
Monte Carlo simulation of electron transport in an InP diode of n+–i(n)–n+ structure is compared with GaAs diode. The anode voltage ranges from 0.5 to 1.5 V. The distribu- tions of electron energies and electron velocities and the profiles of the electron density, electric field and potential and average electron velocity are computed. Based on these data, the near ballistic nature of the electron transport in the 0.2 µm-long diode and the importance of the back-scattering of electrons from the anode n+-layer are discussed. In addition, the e ects of the lattice temperature and doping on the length of the active layer are discussed. Electronic states within the conduction band valleys at the
Keywords
, Electric field; back, scattering; non, parabolic; Brillouin zone
@article{paperid:1016257,
author = {Arabshahi, Hadi and Rezaee Roknabadi, Mahmood and Badieian Baghsiyahi, Fatemeh and M. R. Khalvati},
title = {Monte Carlo Simulation of Steady-State Transport in Submicrometer InP and GaAs n+ i(n) n+ Diode},
journal = {Modern Physics Letters B},
year = {2010},
volume = {24},
number = {6},
month = {March},
issn = {0217-9849},
pages = {549--560},
numpages = {11},
keywords = {Electric field; back-scattering; non-parabolic; Brillouin zone},
}
%0 Journal Article
%T Monte Carlo Simulation of Steady-State Transport in Submicrometer InP and GaAs n+ i(n) n+ Diode
%A Arabshahi, Hadi
%A Rezaee Roknabadi, Mahmood
%A Badieian Baghsiyahi, Fatemeh
%A M. R. Khalvati
%J Modern Physics Letters B
%@ 0217-9849
%D 2010
