We present calculations based on an ensemble Monte Carlo program of the steady-state electron drift velocity in bulk Ga0.5In0.5P and Al0.26Ga0.26In0.48P as well as present a list of material parameters for these substances which are of use in the modeling of semiconductor devices made from these material types. Calculations are made using a non-parabolic effective mass energy band model, Monte Carlo simulation that includes all of the major scattering mechanisms. The band parameters used in the simulation are extracted from optimized pseudopotential band calculations to ensure excellent agreement with experimental information and ab-initio band models. The effects of alloy scattering on the electron transport physics are examined. For two materials, it is found that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material parameters.

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