Title : ( Steady-state and Transient Electron Transport Within Bulk III-V Nitride Semiconductors Using an Updated Semiclassical Three-valley Monte Carlo Method )
Authors: Hadi Arabshahi , Mahmood Rezaee Roknabadi , fatemeh badieian baghsiyahi , zahra eslami ,
دانلود فایل برای اعضای دانشگاهAccess to full-text not allowed by authors
Abstract
An ensemble Monte Carlo simulation is used to compare high field electron transport in bulk InN, AlN and GaN. For all materials, we find that electron velocity overshoot only occurs when the electric field in increased to a value above a certain critical field .This critical field is strongly dependent on the material parameters. Transient velocity overshoot has also been simulated, with the sudden application of fields up to1000 kV/m , appropriate to the gate-drain fields expected within an operational field effect transistor. The electron drift velocity relaxes to the saturation value of 105 m/s within 3 ps, for all crystal structures. The steady state and transient velocity overshoot characteristics are in fair agreement with other recent calculations.
Keywords
, Velocity overshoot, gate-drain, transient, critical field, drift velocity.
@article{paperid:1016994,
author = {Arabshahi, Hadi and Rezaee Roknabadi, Mahmood and Badieian Baghsiyahi, Fatemeh and Zahra Eslami},
title = {Steady-state and Transient Electron Transport Within Bulk III-V Nitride Semiconductors Using an Updated Semiclassical Three-valley Monte Carlo Method},
journal = {Advances in Applied Science Research},
year = {2010},
volume = {1},
number = {1},
month = {July},
issn = {0976-8610},
pages = {19--25},
numpages = {6},
keywords = {Velocity overshoot; gate-drain; transient; critical field; drift velocity.},
}
%0 Journal Article
%T Steady-state and Transient Electron Transport Within Bulk III-V Nitride Semiconductors Using an Updated Semiclassical Three-valley Monte Carlo Method
%A Arabshahi, Hadi
%A Rezaee Roknabadi, Mahmood
%A Badieian Baghsiyahi, Fatemeh
%A Zahra Eslami
%J Advances in Applied Science Research
%@ 0976-8610
%D 2010
