Title : ( A New Study on Calculation of Electron Transport Characteristics in Semiconductor Materials )
Authors: Hadi Arabshahi , F. Sarlak ,
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Abstract
We introduce a new calculation method to compute the electron transport properties in semiconductor devices. Using the relaxation-time approximation, the Boltzmann transport equation for electrons has been solved to calculate the thermal energy flux, electrical conductivity, seebeck coefficient and thermal conductivity.
Keywords
Semiconductor device; Boltzmann transport equation; seebeck coefficient.
@article{paperid:1023116,
author = {Arabshahi, Hadi and F. Sarlak},
title = {A New Study on Calculation of Electron Transport Characteristics in Semiconductor Materials},
journal = {International Archive of Applied Sciences and Technology},
year = {2010},
volume = {1},
number = {2},
month = {December},
issn = {0976-4828},
pages = {71--80},
numpages = {9},
keywords = {Semiconductor device; Boltzmann transport equation; seebeck coefficient.},
}
%0 Journal Article
%T A New Study on Calculation of Electron Transport Characteristics in Semiconductor Materials
%A Arabshahi, Hadi
%A F. Sarlak
%J International Archive of Applied Sciences and Technology
%@ 0976-4828
%D 2010
