International Journal of Science and Advanced Technology, Volume (1), No (3), Year (2011-5) , Pages (6-8)

Title : ( A New Study of Polaron Scattering Phenomena in Bulk Semiconductor Devices )

Authors: Hadi Arabshahi ,

Access to full-text not allowed by authors

Citation: BibTeX | EndNote

Abstract

It is shown that polaron scattering affects substantially the low-field electrical transport electron in bulk materials. It is found that the electron mobility decreases monotonically as the temperature increases. The important subcategories of polarons–large polarons, small polarons, and bipolarons–are considered in turn,

Keywords

Polaron; bipolarons; electrical transport mobility.
برای دانلود از شناسه و رمز عبور پرتال پویا استفاده کنید.

@article{paperid:1023130,
author = {Arabshahi, Hadi},
title = {A New Study of Polaron Scattering Phenomena in Bulk Semiconductor Devices},
journal = {International Journal of Science and Advanced Technology},
year = {2011},
volume = {1},
number = {3},
month = {May},
issn = {2221-8386},
pages = {6--8},
numpages = {2},
keywords = {Polaron; bipolarons; electrical transport mobility.},
}

[Download]

%0 Journal Article
%T A New Study of Polaron Scattering Phenomena in Bulk Semiconductor Devices
%A Arabshahi, Hadi
%J International Journal of Science and Advanced Technology
%@ 2221-8386
%D 2011

[Download]