Title : ( Comparison of Low Field Electron Transport Properties in InN and GaN Semiconductors by Solving Boltzmann Equation Using Iteration Model )
Authors: Hadi Arabshahi , A. Vatan-khahan , M. H. Tayarani ,
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Abstract
mobility in GaN and InN are calculated, by solving Boltzmann equation using iteration model, as a function of temperature for carrier concentrations of 1016, 1017, and 1018 cm-3. Both GaN and InN have maximum mobility between 100 and 200 K, depending on the electron density. The theoretical maximum mobility in GaN and InN at 300 K are about 1000 and 4400 cm2V-1s-1. We compared the results with experimental data and find reasonable correlation.
Keywords
Iteration Model; ionized impurity scattering; Electron mobilities.
@article{paperid:1023141,
author = {Arabshahi, Hadi and A. Vatan-khahan and M. H. Tayarani},
title = {Comparison of Low Field Electron Transport Properties in InN and GaN Semiconductors by Solving Boltzmann Equation Using Iteration Model},
journal = {International Journal of Science and Advanced Technology},
year = {2011},
volume = {1},
number = {5},
month = {July},
issn = {2221-8386},
pages = {6--11},
numpages = {5},
keywords = {Iteration Model; ionized impurity scattering; Electron mobilities.},
}
%0 Journal Article
%T Comparison of Low Field Electron Transport Properties in InN and GaN Semiconductors by Solving Boltzmann Equation Using Iteration Model
%A Arabshahi, Hadi
%A A. Vatan-khahan
%A M. H. Tayarani
%J International Journal of Science and Advanced Technology
%@ 2221-8386
%D 2011
