Title : ( Comparison of Electron Scattering Mechanisims and Electron Mobility in AlN and GaN at Low Electric Field Application )
Authors: A. Vatan-khahan , M. H . Tayarani , A. Sadremomtaz , Hadi Arabshahi ,
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Abstract
Iterative technique is used to solve Boltzmann transport equation in bulk wurtzite phase GaN and AlN at central valley conduction band. The electron mobility is calculated as a function of temperature and ionized- impurity in the ranges of 100 K to 600 K and 1016 to 1018 cm-3. The theoretical maximum motilities in GaN and AlN at 300 K are about 1100 and 380 cm2.V-1s-1. We compare the results with experimental data and find reasonable correlation.
Keywords
Iteration Model; ionized impurity scattering;
@article{paperid:1023143,
author = {A. Vatan-khahan and M. H . Tayarani and A. Sadremomtaz and Arabshahi, Hadi},
title = {Comparison of Electron Scattering Mechanisims and Electron Mobility in AlN and GaN at Low Electric Field Application},
journal = {International Journal of Science and Advanced Technology},
year = {2011},
volume = {1},
number = {5},
month = {July},
issn = {2221-8386},
pages = {116--119},
numpages = {3},
keywords = {Iteration Model; ionized impurity scattering;},
}
%0 Journal Article
%T Comparison of Electron Scattering Mechanisims and Electron Mobility in AlN and GaN at Low Electric Field Application
%A A. Vatan-khahan
%A M. H . Tayarani
%A A. Sadremomtaz
%A Arabshahi, Hadi
%J International Journal of Science and Advanced Technology
%@ 2221-8386
%D 2011
